ISI Report

Low Noise Amplifiers (LNAs) play a critical role in high-frequency circuits, particularly in millimeter- wave applications such as communication systems, radar, and sensing technologies. The W-band (75– 110 GHz) has gained attention due to its potential for high-speed data transmission and advanced imaging applications. This paper explores recent innovations in LNA design utilizing High Electron Mobility Transistor (HEMT) technology, which has shown significant advantages in reducing noise figures and enhancing gain performance. Through an extensive literature review and analysis of recent research findings, this study presents technological advancements, methodologies, and experimental results that contribute to the evolution of high-performance W-band LNAs. Recent innovations in Low Noise Amplifiers (LNAs) with W-band and High Electron Mobility Transistor (HEMT) technology have significantly advanced high-frequency circuit design, enabling superior performance in millimeter-wave applications. The W-band (75–110 GHz) is increasingly critical for next-generation wireless communication, radar, and imaging systems, where minimizing noise and maximizing gain are paramount. HEMT-based LNAs, leveraging materials like GaAs, GaN, and InP, offer exceptional electron mobility, reduced parasitics, and enhanced thermal stability, resulting in lower noise figures and higher efficiency. This paper explores these technological advancements, highlighting cutting-edge circuit topologies, material innovations, and integration techniques that drive the development of compact, high-performance LNAs for modern communication and sensing technologies.